PART |
Description |
Maker |
HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics ST Microelectronics
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KI5902DC |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KI5903DC |
Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
KI5904DC |
Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
|
TY Semiconductor Co., Ltd
|
KRF8910 |
Drain- Source Voltage VDS 20 V Gate-to-Source Voltage VGS -20 V
|
TY Semiconductor Co., Ltd
|
SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
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Mitel Semiconductor MITEL[Mitel Networks Corporation]
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ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包) MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V From old datasheet system MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
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意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
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Philips
|
SI1302DL |
Drain-Source Voltage
|
TY Semiconductor Co., L...
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2N3970 2N3971 2N3972 |
DRAIN-SOURCE VOLTAGE
|
New Jersey Semi-Conductor Products, Inc.
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